Deposition of metal and dielectric thin films by electron-beam evaporation and DC/RF magnetron sputtering
Manufacturer: BOC Edw., United Kingdom
Year: 2007
Location: 213
Year: 2007
Location: 213
| Main features: | |
| Wafer diameter: | up to 100 mm |
| Materials: | |
| elements: | Al, Cu, W, Au, Pt, Cr, Nb, Ta, Ni, Mo, C |
| compounds: | TiN, NiCr, Si3N4 |
| oxides: | TiO2, Ta2O5, Al2O3, SiO2, In2O3-SnO2 |
| Deposition of wide range of conductor, semiconductor, and dielectric materials applicable for magnetron sputtering | |
| Plasma glow discharge wafer cleaning | |
| Wafer heating: | up to 300 °C |