Plasma reactive ion etching of metals, Si and Si compounds, and dielectrics.
Manufacturer: Oxford Instruments, United Kingdom
Year: 2007
Location: 222
Year: 2007
Location: 222
| Main features: | |
| Metals: | W, Nb, Ta, Mo |
| Si compounds: | SiO2, Si3N4 |
| Wafer diameter: | up to 200 mm |
| Roughing pump productivity: | 95 m3/h |
| Turbo molecular pump with inert gas purge: | |
| 5 reactive gas lines with independent | |
| automatic mass flow control | |
| reactive gas: | O2, Ar, CF4, CHF3, SF6 |